Breakthrough in 2D Materials for Efficient Edge AI: Sb-Contacted MoS2 Flash Memory Enables Ultra-efficient In-memory Computing in Analogue Content Addressable Memory (Published in Nature Nanotechnology)

Breakthrough in 2D Materials for Efficient Edge AI: Sb-Contacted MoS2 Flash Memory Enables Ultra-efficient In-memory Computing in Analogue Content Addressable Memory (Published in Nature Nanotechnology)

An engineering research team from the HKU CANLab, the Department of Electrical and Electronic Engineering (EEE) at The University of Hong Kong (HKU), led by Professor Can LI, Dr. Guoyun GAO and Mr. Bo WEN, has developed a breakthrough in 2D materials for efficient...