Biography
Prof. Lai’s Ph.D. research at the University of Hong Kong was related to the design of small-sized MOS transistor with emphasis on narrow-channel effects. The work involved the development of both analytical and numerical models. Worked as a Post-doctoral fellow : i) proposed and implemented a novel self-aligned structure for bipolar transistor, ii) designed and implemented an advanced poly-emitter bipolar process with emphasis on self-alignment and trench isolation.
His current research interests are on thin gate dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based on Si, SiC, GaN, Ge, organics, and on microsensors for detecting gases, heat, light, and flow.
Selected Publications
- J.P. Xu, P.T. Lai, and Y.C. Cheng, “Dynamic-stress-induced enhanceddegradation of 1/f noise in n-MOSFET’s”, IEEE Trans. Electron Devices, vol.
ED-47, pp. 109-112, Jan 2000. - J.P. Xu, P.T. Lai, C.L. Chan and Y.C. Cheng, “Improved Performance andReliability of N2O-Grown Oxynitride on 6H-SiC “, IEEE Electron Device Letters, Vol. 21, pp. 298-300, Jun 2000.
- P.T. Lai, J.P. Xu and C. L. Chan, “Effects of Wet N2O Oxidation on Interface Properties of 6H-SiC MOS Capacitors”, IEEE Electron Device Letters, Vol. 23, pp. 410-412, July 2002.
- J.P. Xu, P.T. Lai, D.G. Zhong and C. L. Chan, “Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator”, IEEE Electron Device Letters, Vol. 24, pp. 13-15, Jan 2003.
- J.P. Xu, P.T. Lai, C.X. Li, X. Zou, C.L. Chan, “Improved Electrical Properties of Germanium MOS Capacitors with Gate Dielectric Grown in Wet NO Ambient”, IEEE Electron Device Letters, Vol. 27, pp. 439-441, Jun 2006.