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X-WR-CALDESC:Events for Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系
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TZID:Asia/Hong_Kong
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DTSTART;TZID=Asia/Hong_Kong:20251208T140000
DTEND;TZID=Asia/Hong_Kong:20251208T150000
DTSTAMP:20260511T035848
CREATED:20251121T085327Z
LAST-MODIFIED:20251121T094034Z
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SUMMARY:Seminar on Semiconductor Nanodimer as a Partially Open Terahertz Resonator
DESCRIPTION:The event has been rescheduled to December 8\, 2025 (Monday). \nAbstract\nResonators are often the first apparatus to be constructed and thoroughly investigated when a new region of the spectrum is being explored. From the days of spark-gap generators in early radio transmission to the more recent maser and laser era\, resonant systems have always been essential in enabling a given range of the spectrum to become accessible to electronic communication and instrument applications. With the current interest in terahertz technology\, it would appear logical to search for structures or physical processes that exhibit natural resonances in the terahertz range. Plasma resonance in extrinsic semiconductors can be designed to exhibit field concentration and guiding characteristics that are impetus for sensing and circuitry applications for research and development of terahertz technology. While a single semiconductor nanoparticle (SNP) does exhibit surface plasmon resonance\, the local terahertz field garnered near the two poles of an SNP lacks symmetry and is strongly influenced by the embedding medium. On the other hand\, a semiconductor nanodimer (SND) formed by two SNPs with a gap in between them offers a more secluded environment for field enhancement with better symmetry in field distribution. Considerable attention has been given to metallic nanodimers\, leading to their roles in sensing and antenna applications. On the other hand\, investigations on SNP and SND are currently in the early stage. The salient characteristics of SNDs formed with matched and dissimilar SNPs are discussed in light of their potential for terahertz components and systems development. \nSpeaker\nProf. Thomas WONG\nProfessor Emeritus\,\nDepartment of Electrical and Computer Engineering\,\nIllinois Institute of Technology\nAdjunct Professor of HKU-EEE \nSpeaker’s Biography\nThomas WONG received the B.Sc. degree from the University of Hong Kong\, and the M.S. and Ph.D. degrees from Northwestern University\, all degrees being in Electrical Engineering. He was a Product Engineer at Motorola Semiconductor (HK) before going to the United States for graduate study. He joined Illinois Institute of Technology as a faculty member in 1981 and is currently a Professor Emeritus in the Electrical and Computer Engineering (ECE) Department. He has conducted research in material measurements\, charge transport in ionic and electronic conductors\, transient electromagnetics\, millimeter-wave communication systems\, and propagation effects in high-speed semiconductor devices. In collaboration with Argonne National Laboratory and Fermilab\, he has contributed to research in dielectric loaded accelerators\, coupler design for superconducting multicell cavity resonators\, and nanoscale position sensors. Recent activities have been on space-charge interactions in semiconductor nanostructures. He has served as Graduate Program Director and Department Chair of the ECE Department. In the 1998-1999 academic year he served as the Chair of the University Faculty Council. He is the author of Fundamentals of Distributed Amplification (Artech 1993) and coauthor of Electromagnetic Fields and Waves (Higher Education Press\, 2002 and 2006). He is a Fellow of the International Association of Advanced Materials. \nOrganiser\nIr Dr. King Hang LAM\nDepartment of Electrical and Electronic Engineering\,\nThe University of Hong Kong\n\nAll are welcome!
URL:https://ece.hku.hk/events/20251208-1/
LOCATION:Room CB-603\, 6/F\, Chow Yei Ching Building\, The University of Hong Kong
CATEGORIES:Highlights,Seminar
ATTACH;FMTTYPE=image/jpeg:https://ece.hku.hk/wp-content/uploads/2025/11/1280-6.jpg
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