BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系 - ECPv6.16.0//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系
X-ORIGINAL-URL:https://ece.hku.hk
X-WR-CALDESC:Events for Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:Asia/Hong_Kong
BEGIN:STANDARD
TZOFFSETFROM:+0800
TZOFFSETTO:+0800
TZNAME:HKT
DTSTART:20230101T000000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;TZID=Asia/Hong_Kong:20240123T163000
DTEND;TZID=Asia/Hong_Kong:20240123T180000
DTSTAMP:20260513T064932
CREATED:20240112T064937Z
LAST-MODIFIED:20250114T074441Z
UID:17931-1706027400-1706032800@ece.hku.hk
SUMMARY:New prospects for group IV and III-V Materials for optoelectronic Applications
DESCRIPTION:Nowadays\, there is a large effort to find a monolithic solution for photonics and electronics. The main purpose is to integrate materials which have high carrier mobility and high photonic performance for optoelectronic components. In many cases\, a 3D integration is required where electrons are processing the data and photons are communicating the data in a chip. In this field of research\, materials such as Ge\, GeSi or GeSn have attracted attention due to their excellent electronic and photonic properties. These materials have been applied in the channel of transistors as well in active regions for detection and lasing of Infrared light. Ge\, GeSi and GeSn have demonstrated excellent performance in near and short wavelength infrared (SWIR) regions. Although\, a large effort has been spent on group IV materials for laser application but so far there is no operating laser at room temperature. There are also some interests for III-V growth on Si for photonic application. The control of defect density is a vital issue for good performance. This invited talk will present the challenges for the integration of group IV materials as well as III-V materials on Si for optoelectronics devices. Issues such as epitaxy\, material quality\, strain engineering\, structure designs for SWIR detectors and lasers are discussed in detail. \nBiography of the speaker: \nProfessor Henry Homayoun Radamson is from Sweden\, he got bachelor from Stockholm University\, later got Master and PhD from Linkoping University in 1996\, Institute of Physics and Measurement Techniques. Between 1997-2016\, he worked for Royal Institute of Technology in Sweden\, Department of Electrical components and circuits as a Senior Researcher. Henry got invited to China through 1000-talent project since 2016 and worked in Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). In 2019\, Prof. Radamson was invited as chief Scientist in Guangdong Greater Bay Area Institute of Integrated Circuit and System (GIICS) and he became Fellow of European Academy of Sciences same year. So far\, he has almost 300 publications in Journals like ASC Nano\, Nano Letters\, Physical Review B\, Applied Physics Letter\, IEEE Electron Device Letters\, IEEE Transactions on Electron Devices\, etc. He has also written 4 books like CMOS past present and future.He has got many awards like Swedish quality innovation\, First award in 2019; Swedish venture Cup award\, Innovation contest\, 10 Best awards in 2011; Talent Award Guangzhou\, March 2023; Friendship Award in China\, March 12\, 2023; Best Tutor Award\, University of Chinese Academy of Sciences 2021; ZhuliYuehua Teacher Award\, University of Chinese Academy of Sciences 2020; Best Course Award\, University of Chinese Academy of Sciences 2020; Best Teacher Award\, University of Chinese Academy of Sciences\, 2019; Foreign Talent Award\, China\, 2018; Best Teacher Award\, Reykjavik University\, Iceland\, 2008. So Far\, His research field focuses on semiconductor materials and process. Until 2022\, he has successfully made Germanium-based short wave infrared chips with commercial quality and significant price advantage compared with InGaAs material chip. He is also working with Terahertz chips and laser materials which have wide application in the market.\n\nAll are welcome.
URL:https://ece.hku.hk/events/new-prospects-for-group-iv-and-iii-v-materials-for-optoelectronic-applications/
CATEGORIES:Seminar
ATTACH;FMTTYPE=image/jpeg:https://ece.hku.hk/wp-content/uploads/2024/02/Seminar-s-banner.jpg
END:VEVENT
END:VCALENDAR