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PRODID:-//Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系 - ECPv6.16.0//NONSGML v1.0//EN
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X-ORIGINAL-URL:https://ece.hku.hk
X-WR-CALDESC:Events for Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系
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TZID:Asia/Hong_Kong
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TZOFFSETFROM:+0800
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TZNAME:HKT
DTSTART:20230101T000000
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BEGIN:VEVENT
DTSTART;TZID=Asia/Hong_Kong:20240521T160000
DTEND;TZID=Asia/Hong_Kong:20240521T170000
DTSTAMP:20260512T193134
CREATED:20240514T041838Z
LAST-MODIFIED:20250114T062744Z
UID:18510-1716307200-1716310800@ece.hku.hk
SUMMARY:Energy Intelligent Computing Devices Based on 2D Materials
DESCRIPTION:Abstract\nDespite the long and crucial role of traditional solid-state physics for current silicon-based technologies\, next-generation neuromorphic\, non-volatile memory\, and energy devices that are key components in the era of the Internet of Things (IoT) require novel working principles with quantum physics emerging in low-dimensional materials. The main research direction for future devices is to realize ‘ultralow device operation energy’\, ‘ultrahigh device operation speed’\, and ‘large-scale device integration (up to 10)’\, which calls for exploring diverse quantum phenomena in low dimensional device components. In this talk\, I will present some of our recent efforts to establish new device physics for energy-intelligent devices\, which could be a milestone for promising future devices. In particular\, dynamic convolution neural network\, phase transition and other intriguing quantum physics in two-dimensional (2D) materials will be discussed along with logic device\, neuromorphic computing\, and energy device applications. \nSpeaker\nProf. Heejun YANG\nQuantum Energy Device (QED) Lab\nDepartment of Physics\,\nKorea Advanced Institute of Science and Technology (KAIST) \nBiography of the Speaker\nProf. Heejun YANG received B.S. in physics from KAIST in 2003 and a joint Ph.D. in physics from Seoul National University (Korea) and University Paris-Sud XI (France) in 2010. He was awarded the IUPAP Young Scientist Prize (YSP) in Semiconductor Physics 2018 for his outstanding contribution to novel interface devices based on structural\, electronic\, and quantum-state control with van der Waals layered materials. His Ph.D. subject was on graphene by scanning tunnelling microscopy and spectroscopy (STM/STS)\, and he experienced industrial device studies in Samsung Electronics from 2010 to 2012. Then\, he conducted his research on graphene spintronics in Albert Fert’s (2007 Novel laureate) group in CNRS/Thales as a postdoc from 2012 to 2014. Based on his research background on molecular and nanometer-scale studies (in Seoul and Paris) and electric and spintronic device physics (in Samsung and CNRS/Thales)\, he moved to Sungkyunkwan University (2014~2021) and KAIST (2021~) and started original device studies with phase engineering of low-dimensional materials. He has proposed novel and conceptual interface devices such as ‘Graphene Barristor’ and ‘Ohmic homojunction contact between semiconductor channel and metal electrodes’. In 2022\, he gave an invited talk at the IUPAP centenary symposium as a representative YSP winner. \nOrganizer\nProf. C.L. TAN \nAll are welcome! We look forward to seeing you!
URL:https://ece.hku.hk/events/20240521-1/
LOCATION:Room CB-603\, 6/F\, Chow Yei Ching Building\, The University of Hong Kong
CATEGORIES:Seminar
ATTACH;FMTTYPE=image/jpeg:https://ece.hku.hk/wp-content/uploads/2024/05/1280-7.jpg
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