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PRODID:-//Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系 - ECPv6.15.20//NONSGML v1.0//EN
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X-ORIGINAL-URL:https://ece.hku.hk
X-WR-CALDESC:Events for Department of Electrical and Computer Engineering (HKUECE) 電機與計算機工程系
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TZID:Asia/Hong_Kong
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TZOFFSETFROM:+0800
TZOFFSETTO:+0800
TZNAME:HKT
DTSTART:20230101T000000
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BEGIN:VEVENT
DTSTART;TZID=Asia/Hong_Kong:20241125T140000
DTEND;TZID=Asia/Hong_Kong:20241125T150000
DTSTAMP:20260512T075045
CREATED:20241115T070011Z
LAST-MODIFIED:20250114T032150Z
UID:19451-1732543200-1732546800@ece.hku.hk
SUMMARY:RPG Seminar – High-performance E-mode GaN HEMTs and Inverters Using a CTL-based Monolithically Integrated Platform for Power ICs Applications
DESCRIPTION:Abstract\nGaN high-electron-mobility transistors (HEMTs) have been extensively studied and commercialized due to their superior material properties for high-frequency and high-power applications. To fully harness their potential\, GaN-based power ICs have been proposed to develop energy-efficient\, high-density integrated circuits and systems. \nTo ensure fail-safe operation\, minimize standby power consumption\, and facilitate circuit simplicity\, enhancement-mode (E-mode) GaN HEMTs with high VTH are required. Moreover\, E-mode GaN HEMTs in direct-coupled FET logic (DCFL) integration show considerable advantages and promising potential for GaN power IC applications. \nIn this seminar\, we will introduce a novel charge trapping layer (CTL)-based monolithically integrated platform to address existing technological challenges and demonstrate high-performance E-mode GaN HEMTs and inverters for power IC applications. This work offers a promising approach for implementing E-mode GaN HEMTs with high VTH and excellent breakdown characteristics without performance degradation. It unlocks their potential for the monolithic integration of GaN HEMTs. \nSpeaker\nMr. Jiang Yang\nDepartment of Electrical and Electronic Engineering\,\nThe University of Hong Kong \nBiography of the speaker\nMr. Jiang Yang received his Bachelor of Science (B.S.) degree from the Southern University of Science and Technology (SUSTech)\, Shenzhen\, China\, in 2019. From 2019 to 2021\, he was with the wide-bandgap semiconductor electronic materials and devices group at SUSTech as a research assistant. He is currently pursuing his Ph.D. degree with the Department of Electrical and Electronic Engineering at The University of Hong Kong. His research interests include GaN-based semiconductor materials and devices\, integrated GaN power device technology\, and emerging in-memory/sensor computing. \nOrganizer\nProf. Han Wang \nAll are welcome!
URL:https://ece.hku.hk/events/20241125-1/
LOCATION:Room CB-603\, 6/F\, Chow Yei Ching Building\, The University of Hong Kong
CATEGORIES:Seminar
ATTACH;FMTTYPE=image/jpeg:https://ece.hku.hk/wp-content/uploads/2024/11/rpg-seminar.jpg
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BEGIN:VEVENT
DTSTART;TZID=Asia/Hong_Kong:20241125T150000
DTEND;TZID=Asia/Hong_Kong:20241125T160000
DTSTAMP:20260512T075045
CREATED:20241115T070331Z
LAST-MODIFIED:20250114T032117Z
UID:19452-1732546800-1732550400@ece.hku.hk
SUMMARY:RPG Seminar – Electrically Reconfigurable Surface Acoustic Wave Phase Shifters Based on ZnO TFTs on LiNbO3 Substrate
DESCRIPTION:Abstract\nReconfigurable surface acoustic wave (SAW) phase shifters are emerging as important components for advancing secure wireless communication\, adaptable signal processing\, and intelligent sensing technologies.   A promising approach to SAW modulation involves gate voltage-controlled tuning through acoustoelectric interactions\, which offers efficient modulation at low bias voltages.   However\, current acoustoelectric devices face limitations\, such as restricted tunability\, complex heterostructures\, and demanding fabrication processes\, hindering their practical deployment. \nIn this seminar\, we will introduce a new voltage-tunable SAW phase shifter material system\, based on an atomic layer deposition (ALD) ZnO thin-film transistor (TFT) integrated with a LiNbO3 substrate. This novel structure leverages the high electromechanical coupling coefficient (K²) of LiNbO3 and the superior conductivity tuning capability of ZnO\, while also featuring a simplified architecture that facilitates fabrication.  This ZnO-on-LiNbO3 platform holds promise for a broad range of applications requiring adaptable acoustic components. \nSpeaker\nMr. Zhang Yi\nDepartment of Electrical and Electronic Engineering\,\nThe University of Hong Kong\n \nBiography of the speaker\nZhang Yi is a Ph.D. candidate at The University of Hong Kong specializing in the design and fabrication of MEMS-based piezoelectric acoustic wave devices. Zhang holds a Master’s and bachelor’s degrees in engineering from Wuhan University\, where he developed foundational expertise in acoustic wave technology. His current work aims to drive innovations in “sensing-memory-computing” integrated chip systems\, advancing next-generation piezoelectric devices with broad potential in smart and wireless technologies. \nOrganizer\nProf. Han Wang \nAll are welcome.
URL:https://ece.hku.hk/events/20241125-2/
LOCATION:Room CB-603\, 6/F\, Chow Yei Ching Building\, The University of Hong Kong
CATEGORIES:Seminar
ATTACH;FMTTYPE=image/jpeg:https://ece.hku.hk/wp-content/uploads/2024/11/rpg-seminar.jpg
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