RPG Seminar – High-performance E-mode GaN HEMTs and Inverters Using a CTL-based Monolithically Integrated Platform for Power ICs Applications
Abstract GaN high-electron-mobility transistors (HEMTs) have been extensively studied and commercialized due to their superior material properties for high-frequency and high-power applications. To fully harness their potential, GaN-based power ICs have been proposed to develop energy-efficient, high-density integrated circuits and systems. To ensure fail-safe operation, minimize standby power consumption, and facilitate circuit simplicity, enhancement-mode (E-mode) […]
