On The Interplay of T and R in VCM-based 1T1R Structures
Abstract Redox-based resistive switching random access memory (ReRAM) which is frequently discussed as a promising non-volatile memory as well as a central element in novel neuromorphic computing applications, is typically integrated in 1-transistor-1-resistor (1T1R) structures. While the access transistor is required as a selective device and acts as an effective current compliance during SET, it […]
